Extended Hydrodynamical Model of Carrier Transport in Semiconductors

نویسندگان

  • Angelo Marcello Anile
  • Giovanni Russo
  • Vittorio Romano
چکیده

A hydrodynamical model based on the theory of extended thermodynamics is presented for carrier transport in semiconductors. Closure relations for fluxes are obtained by employing the maximum entropy principle. The production terms are modeled by fitting the Monte Carlo data for homogeneously doped semiconductors. The mathematical properties of the model are studied. A suitable numerical method, which is a generalization of the Nessyahu–Tadmor scheme to the nonhomogeneous case, is provided. The validity of the constitutive relations has been assessed by comparing the numerical results with detailed Monte Carlo simulations.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Field Dependent Charge Carrier Transport for Organic Semiconductors at the Time of Flight Configuration

In this paper, we used the time-of-flight (TOF) of a charge packet, that injected by a voltage pulse to calculate the drift velocity and mobility of holes in organic semiconducting polymers. The technique consists in applying a voltage to the anode and calculating the time delay in the appearance of the injected carriers at the other contact. The method is a simple way to determine the charge t...

متن کامل

Strong Discontinuities for the 2-d Mep Hydrodynamical Model of Charge Transport in Semiconductors

For the balance equations of charge transport in semiconductors based on the maximum entropy principle (see Anile and Romano (1999) and Romano (2000)), we derive and study the Rankine-Hugoniot jump conditions.

متن کامل

An asymptotic solution for the SHE equations describing the charge transport in semiconductors .

In the framework of charge transport in semiconductors, a technique widely used in order to find approximate solutions of the Boltzmann transport equation (BTE) is based on a spherical harmonics expansion (SHE) of the distribution function (Rahmat, White and Antoniadis, 1996; Vecchi and Rudan, 1998; Ventura, Gnudi and Baccarani, 1995; Liotta and Struchtrup, 2000). Recently an asymptotic solutio...

متن کامل

Cross{validation of Numerical Schemes for Extended Hydrodynamical Models of Semiconductors

The numerical integration of the hydrodynamical model of semiconductors based on Extended Thermodynamics has been tackled. On account of the mathematical complexity of the system no theoretical conditions of convergence are available for the existing schemes. Therefore in order to lend conndence to the obtained numerical solution it was almost mandatory to resort to a cross-validation comparing...

متن کامل

Scattering mechanism of nonmagnetic phase on nano diluted magnetic semiconductors (DMS)

This paper shows the scattering mechanism at diluted magneticsemiconductors. The doped magnetic atom produces a scattering potential due to becoupled of itinerant carrier spin of host material with magnetic momentum of the dopedmagnetic atom. Formulas of scattering event were rewritten by the plane waveexpansion and then the electron mobility of DMS was calculated. Calculations showKondo effect...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • SIAM Journal of Applied Mathematics

دوره 61  شماره 

صفحات  -

تاریخ انتشار 2000